袁俊辉-武汉理工大学物理与力学学院

袁俊辉

更新时间：2023-09-21

姓名：袁俊辉

性别：男

出生年月：1990年03月

职称/职务：特岗教授

学位/学历：博士/研究生

硕/博生导师：硕导

联系方式：yuanjh@whut.edu.cn；yuanjh90@163.com

研究方向：新型存储器设计与微观机理分析；新型低维材料设计与输运研究；新型半导体能带计算方法

教育背景与工作经历：

2009.09-2013.06，武汉理工大学，光信息科学与技术，理学学士

2013.09-2016.06，武汉理工大学，物理学，理学硕士

2016.09-2020.06，华中科技大学，微电子学与固体电子学，工学博士

2017.08-2017.11，清华大学，微纳电子系，联合培养

2020.09-2023.09，华中科技大学，博士后、助理研究员

2023.10-今，武汉理工大学，理学院，特岗教授

主要教学科研成果：

1. Cheng J^#, Yuan J-H^#, Li P Y, Wang J, Wang Y, Zhang Y W, Zheng Y, Zhang P. Applying the Wake-Up-like Effect to Enhance the Capabilities of Two-Dimensional Ferroelectric Field-Effect Transistors, ACS Applied Materials & Interfaces, 2024, 16, 19, 24987–24998.

2. Zhu Y, Li P Y, Yuan J-H^*, Zhang P^*, Wang J. First-Principles Prediction of 2D Semiconductors MAN₃ (M = V, Nb, Ta; A = Si, Ge) from the MA₂N₄ Family: Implication for Optoelectronics Applications, ACS Applied Nano Materials, 2024, 7, 7, 7300–7311.

3. Yuan J-H, Mao G-Q, Xue K-H*, Bai N, Wang C, Cheng Y, Lyu H, Sun H, Wang X, Miao X. Ferroelectricity in HfO₂ from a Coordination Number Perspective, Chemistry of Materials, 2023, 35, 94.

4. Mao G-Q^#, Yuan J-H^#, Xue K-H^*, Huang J, Yang S, Miao X. In search of Pca2₁ phase ferroelectrics, Journal of Physics: Materials, 2023, 6, 024001.

5. Zhu Y, Yuan J-H^*, Fang WY, Sun Z G, Wang J^*. A family of two-dimensional semiconductors with transition metal Kagome lattice, large power factor and ultralow lattice thermal conductivity, Applied Surface Science, 2023, 636,157817.

6. Yuan J-H^#, Zhu Y-L^#, Fang W-Y^#, Yang S-X, Xue K-H^*, Bai N, Ye L^*, Cheng X-M^*, Miao X. Two-dimensional AMgB (A = Na, K; B = P, As, Sb, Bi) with promising optoelectronic and thermoelectric performances, ACS Applied Electronic Materials, 2023, 5, 3, 1405-1419.

7. Zhang P, Yuan J-H^*, Fang W-Y^*, Li G, Wang J. Two-dimensional V-shaped PdI₂: Auxetic semiconductor with ultralow lattice thermal conductivity and ultrafast alkali ion mobility, Applied Surface Science, 2022, 601, 154176.

8. Yuan J-H, Xue K-H^*, Wang J, Miao X. Designing stable 2D materials solely from VIA elements, Applied Physics Letters, 2021, 119, 223101.

9. Cui H, Yang S, Yuan J-H^*, Li L-H, Ye F, Huang J, Xue K-H^*, Miao X-S. Shell DFT-1/2 method towards engineering accuracy for semiconductors: GGA versus LDA, Computational Materials Science, 2022, 213, 111669.

10. Yuan J-H^#, Mao G-Q^#, Xue K-H^*, Wang J, Miao X-S. A new family of two-dimensional ferroelastic semiconductors with negative Poisson's ratios, Nanoscale, 2020, 12, 14150-14159.

11. Xia M^#, Yuan J-H^#, Niu G^*, Du X, Yin L, Pan W, Luo J, Li Z, Zhao H, Xue K-H, Miao X-S, Tang J. Unveiling the structural descriptor of A₃B₂X₉ perovskite derivatives toward X-ray detectors with low detection limit and high stability, Advanced Functional Materials, 2020, 1910648.

12. Yuan J-H^#, Li L-H^#, Zhang W, Xue K-H^*, Wang C, Wang J, Miao X-S, Zeng X-C^*. Pt₅Se₄ monolayer: A highly efficient electrocatalyst towards hydrogen and oxygen electrode reactions, ACS Applied Materials & Interfaces, 2020, 12(12): 13896-13903.

13. Li H-Y^#, Huang X-D^#, Yuan J-H^#, Lu Y-F, Wan T-Q, Li Y^*, Xue K-H^*, He Y, Xu M, Tong H, Miao X-S. Controlled memory and threshold switching behaviors in a heterogeneous memristor for neuromorphic computing, Advanced Electronic Materials, 2020, 6, 2000309.

14. Xia M^#, Yuan J-H^#, Luo J, Pan W, Wu H, Chen Q, Xue K-H^*, Miao X, Niu G^*, Tang J. Two-dimensional perovskites as sensitive strain sensors, Journal of Materials Chemistry C, 2020, 8, 3814-3820.

15. Yuan J-H, Xue K-H^*, Wang J-F, Miao X-S. Gallium thiophosphate: An emerging bidirectional auxetic two-dimensional crystal with wide direct band gap, The Journal of Physical Chemistry Letters, 2019, 10(15):4455–4462.

16. Yuan J-H, Cresti A, Xue K-H^*, Song Y-Q, Su H-L, Li L-H, Miao N-H^*, Sun Z-M, Miao X-S. TlP₅: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility, Journal of Materials Chemistry C, 2019, 7(3):639–644.

17. Song Y-Q^#, Yuan J-H^#, Li L-H, Xu M, Wang J-F, Xue K-H^*, Miao X-S. KTlO: a metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism, Nanoscale, 2019, 11(3):1131–1139.

18. Yuan J-H, Xue K-H^*, Chen Q, Fonseca LRC, Miao X-S^*. Ab initio simulation of Ta₂O₅: A high symmetry ground state phase with application to interface calculation, Annalen der Physik, 2019, 531(8):1800524.

19. Yuan J-H, Song Y-Q, Chen Q, Xue K-H^*, Miao X-S. Single-layer planar penta-X₂N₄ (X = Ni, Pd and Pt) as direct-bandgap semiconductors from first principle calculations, Applied Surface Science, 2019, 469:456–462.

20. Yuan J-H, Yu N, Wang J, Xue K-H^*, Miao X. Design lateral heterostructure of monolayer ZrS₂ and HfS₂ from first principles calculations, Applied Surface Science, 2018, 436:919–926.

21. Yuan J-H, Yu N, Xue K-H^*, Miao X. Stability, electronic and thermodynamic properties of aluminene from first-principles calculations, Applied Surface Science, 2017, 409:85–90.

22. Yuan J-H, Xie Q, Y N^*, Wang J^*. Surface regulated arsenene as Dirac materials: From density functional calculations, Applied Surface Science, 2017, 394, 625–629.

23. Yuan J-H, Chen Q, Fonseca LRC, Xu M, Xue K-H^*, Miao X-S. GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides, Journal of Physics Communications, 2018, 2, 105005.

24. Xue K-H^*, Yuan J-H, Fonseca LRC^*, Miao X-S^*. Improved LDA-1/2 method for band structure calculations in covalent semiconductors, Computational Materials Science, 2018, 153:493–505.

25. Yuan J, Li Y, Wang M, Huang X, Zhang T, Xue K-H^*, Yuan J-H, Ou-Yang J, Yang X, Miao X^*, Zhu B^*. Ultrasound: A new strategy for artificial synapses modulation, InfoMat, 2024, e12528.

26. Li P, Liu J, Yuan J-H, Guo Y, Wang S, Zhang P^*, Wang W^*. Artificial Funnel Nanochannel Device Emulates Synaptic Behavior, Nano Letters, 2024, 24, 20, 6192–6200.

27. Jin T, Liu Z, Luo J, Yuan J-H, Wang H, Xie Z, Pan W, Wu H, Xue K-H^*, Liu L, Hu Z, Zheng Z, Tang J, Niu G^*. Self-wavelength shifting in two-dimensional perovskite for sensitive and fast gamma-ray detection. Nature Communications, 2023, 14, 2808.

28. Du X, Li J, Niu G^*, Yuan J-H, Xue K-H, Xia M, Pan W, Yang X, Zhu B^*, Tang J^*. Lead halide perovskite for efficient optoacoustic conversion and application toward high-resolution ultrasound imaging, Nature communications, 2021, 12 (1), 3348.

29. Yang B, Pan W, Wu H, Niu G^*, Yuan J-H, Xue K-H, Yin L, Du X, Miao X-S, Yang X, Xie Q, Tang J^*. Heteroepitaxial passivation of Cs₂AgBiBr₆ wafers with suppressed ionic migration for X-ray imaging, Nature Communications, 2019, 10(1):1989.

30. Yang B, Yin L, Niu G^*, Yuan J-H, Xue K-H, Tan Z, Miao X-S, Niu M, Du X, Song H, Lifshitz E, Tang J. Lead‐Free Halide Rb₂CuBr₃ as Sensitive X-Ray Scintillator, Advanced Materials, 2019, 31(44):1904711.

31. Qin Y, Li L-H, Yu Z, Wu F, Dong D, Guo W, Zhang Z, Yuan J-H, Xue K-H, Miao X, Long S. Ultra-High Performance Amorphous Ga₂O₃ Photodetector Arrays for Solar-Blind Imaging. Advanced Science, 2021, 20(8), 2101106.

32. Luo Q, Yu J, Zhang X, Xue K-H, Yuan J-H, Cheng Y, Gong T, Lv H^*, Xu X, Yuan P, Yin J, Tai L, Long S, Liu Q, Miao X, Li J, Liu M. Nb_1-xO₂ based Universal Selector with Ultra-high Endurance (>10¹²), high speed (10 ns) and Excellent Vth Stability[C]//2019 Symposium on VLSI Technology. Kyoto, Japan: IEEE, 2019: T236-T237.

33. Zheng Y, Zheng Y, Gao Z, Yuan J-H, Cheng Y^*, Zhong Q, Xin T, Wang Y, Liu G, Huang Y, Huang R, Miao X, Xue K-H^*, Lyu H^*. Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf_0.5Zr_0.5O₂ films: vacancy generation and lattice dislocation[C]//2021 67th IEEE International Electron Devices Meeting (IEDM). San Francisco, USA: IEEE, 2021.

个人Google学术主页：https://sci-hub.org.cn/citations?user=RyEWNU8AAAAJ&hl=zh-TW&oi=sra

主要科研项目：

1. 湖北省博士后创新研究项目，基于新型DFT-1/2 计算方法的铪基（Hf_1-xZr_xO₂）铁电薄膜内建电场研究，2020.10-2022.09，6万，主持。

2. 国家自然科学基金青年项目（11704134），共价半导体的高效密度泛函带隙修正，2018.01-2020.12，24万，主研。

3. 国家自然科学基金面上项目（61974049），铪基铁电薄膜的内建电场研究，2020.01-2023.12，60万，主研。

4. 华为技术有限公司研究课题，FeFET铁电存储机制研究SOW，2020.01-2020.12，70万，主研。

学术兼职：

担任Journal of Materials Science & Technology，ACS Applied Materials & Interfaces, Nanoscale，Applied Surface Science，Applied Physics Letters等期刊的审稿人。