姓名： 陈凤翔

性别： 女

出生年月：1979年11月

职称/职务：教授/无

学位/学历：博士研究生

硕/博生导师：硕导

联系方式：phonixchen79@whut.edu.cn

研究方向： 微纳级别的光电器件制备、性能与应用研究，如光电探测器、忆阻器的阻变特性与突触功能模拟等。  

教育背景与工作经历：

1999.09-2005.04，上海交通大学，光学，理学博士

1995.09-1999.07，中国地质大学（武汉），物理师资，理学学士

2005.04-2006.03，武汉理工大学，理学院物理科学与技术系，讲师

2006.04-2016.09，武汉理工大学，理学院物理科学与技术系，副教授

2012.09-2013.09，美国北卡罗莱纳大学夏洛特分校，电子与计算机工程系，访问学者，导师：Dr. Yong Zhang

2016.10-今， 武汉理工大学，理学院物理科学与技术系，教授、硕士生导师

主要教学科研成果：

1. Xiaodong Wang, Fengxiang Chen, Xiaoli Li, Tao Xiang and Lisheng Wang. Emulation of Optoelectronic Synaptic Behavior in a MoS₂/WSe₂Based p−n van der Waals Heterostructure Memtransistor. ACS Appl. Electron. Mater. 2024, 6:4311−4320

2. Xiaoli Li, Fengxiang Chen, Xiaodong Wang and Lisheng Wang. Emulation of optical and electrical synaptic functions in MoS₂/SnSe₂ van der Waals heterojunction memtransistors. Japanese Journal of Applied Physics. 2024, 63: 056502. 

3. Tao Xiang, Fengxiang Chen, Xiaoli Li, Xiaodong Wang, Yuling Yan and Lisheng Wang. Simulation of optical and electrical synaptic functions in MoS₂ / α-In₂Se₃ heterojunction memtransistors. Chin. Phys. B, 2023, 32:117301.

4. 余雪玲，陈凤翔，相韬，邓文，刘嘉宁，汪礼胜. ReSe₂/WSe₂记忆晶体管的光电调控和阻变特性.物理学报，2022，71(21):217302.

5. Wen Deng, Li-Sheng Wang, Jia-Ning Liu, Tao Xiang and Feng-Xiang Chen. High-sensitive phototransistor based on vertical HfSe₂/MoS₂ heterostructure with broad-spectral response. Chin. Phys. B, 2022, 31:128502.

6. Jia-Ning Liu，Feng-xiang Chen，Wen Deng，Xue-ling Yu, and Li-Sheng Wang, Optically-controlled resistive switching effects of CdS nanowire memtransistor. Chinese Physics B, 2021, 30(11): 116105

7. 邓文，汪礼胜，刘嘉宁，余雪玲，陈凤翔. 光电协控多层MoS₂记忆晶体管的阻变行为与机理研究.物理学报, 2021, 70(21): 217302

8. Xu JX, Tong XD, Zhang SY, Cheng Z, Zhang L, Zheng PH, Chen FX, Wang R. Zhang Y and Tan W. Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures. AIP advances.2020,10:065122.

9. Jiyue Zou, Lisheng Wang, and Fengxiang Chen. Improved performance of top-gated multilayer MoS₂ transistors with channel fully encapsulated by Al₂O₃ dielectric, AIP Advances, 2019, 9: 095061.

10. Tong XD, Wang R. Zhang SY, Xu JX, Zheng PH, Chen FX. Degradation of Ka-Band GaN LNA under high-input power stress: experimental and theoretical insights. IEEE transactions on electron devices. 2019, 66(12):5091-5096.

11. Wang R, Tong XD, Xu JX, Zhang SY, Zheng PH, Chen FX, Tan W. Assessing the role of fluorine in the performance of Al_xGa_1-xN/GaN high-electron-mobility transistors from first-principles calculations. Physical Review Applied, 2019,11(5):054021.

12. Rong Wang, Jianxing Xu, Shiyong Zhang, Zhe Cheng, Lian Zhang, Penghui Zheng, Feng-Xiang Chen, Xiaodong Tong, Yun Zhang, and Wei Tan. Defect evolution of oxygen induced V_th-shift for ON-state biased AlGaN/GaN HEMTs. Appl. Phys. Lett. 2019,115:143504.

主要科研项目：

1. 国家自然科学基金（青年基金），51702245，GaAs中广延缺陷与载流子输运关联研究，2018/01-2020/12，24万元，已结题，主持。

学术兼职：无