一、个人基本情况

姓名:陈凤翔

性别:女

出生年月:1979.11

职称/职务:教授

学位:博士研究生

所在系: 理学院物理系

电子邮件:phonixchen79@whut.edu.cn

联系电话:15807177658

二、教育背景与工作经历

1995/09 - 1999/07，中国地质大学(武汉)，物理师资，学士

1999/09 - 2005/04，上海交通大学，光学，博士

2005/04 - 2006/03，武汉理工大学，理学院物理科学与技术系，讲师

2006/04 – 2016/09，武汉理工大学，理学院物理科学与技术系，副教授

2012/09 - 2013/09，美国北卡罗莱纳大学夏洛特分校，电子与计算机工程系，访问学者，导师:Dr. Yong Zhang

2016/10 - 至今，武汉理工大学，理学院物理科学与技术系，教授

三、研究方向

微纳级别的光电器件制备、性能与应用研究，如光电探测器、忆阻器的阻变特性与突触功能模拟等。

四、教学研究

承担《量子力学》、《数学物理方法》的本科课程教学和《导波光学》的研究生课程教学，主持并完成省级教研项目一项，校重点教研项目一项，发表相关教研论文4篇。

五、主要科研成果

(1) Tao Xiang, Fengxiang Chen, Xiaoli Li, Xiaodong Wang, Yuling Yan and Lisheng Wang. Simulation of optical and electrical synaptic functions in MoS2 / α-In2Se3 heterojunction memtransistors. Chin. Phys. B, 2023, 32:117301.

(2) 余雪玲，陈凤翔，相韬，邓文，刘嘉宁，汪礼胜. ReSe2/WSe2记忆晶体管的光电调控和阻变特性.物理学报，2022，71(21):217302.

(3) Wen Deng, Li-Sheng Wang, Jia-Ning Liu, Tao Xiang and Feng-Xiang Chen. High-sensitive phototransistor based on vertical HfSe2/MoS2 heterostructure with broad-spectral response. Chin. Phys. B, 2022, 31:128502.

(4) Jia-Ning Liu，Feng-xiang Chen，Wen Deng，Xue-ling Yu, and Li-Sheng Wang, Optically-controlled resistive switching effects of CdS nanowire memtransistor. Chinese Physics B, 2021, 30(11): 116105

(5) 邓文，汪礼胜，刘嘉宁，余雪玲，陈凤翔. 光电协控多层MoS2记忆晶体管的阻变行为与机理研究.物理学报, 2021, 70(21): 217302

(6) Xu JX, Tong XD, Zhang SY, Cheng Z, Zhang L, Zheng PH, Chen FX, Wang R. Zhang Y and Tan W. Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures. AIP advances.2020,10:065122.

(7) Jiyue Zou, Lisheng Wang, and Fengxiang Chen. Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric, AIP Advances, 2019, 9: 095061.

(8) Tong XD, Wang R. Zhang SY, Xu JX, Zheng PH, Chen FX. Degradation of Ka-Band GaN LNA under high-input power stress: experimental and theoretical insights. IEEE transactions on electron devices. 2019, 66(12):5091-5096.

(9) Wang R, Tong XD, Xu JX, Zhang SY, Zheng PH, Chen FX, Tan W. Assessing the role of fluorine in the performance of AlxGa1-xN/GaN high-electron-mobility transistors from first-principles calculations. Physical Review Applied, 2019,11(5):054021.

(10) Rong Wang, Jianxing Xu, Shiyong Zhang, Zhe Cheng, Lian Zhang, Penghui Zheng, Feng-Xiang Chen, Xiaodong Tong, Yun Zhang, and Wei Tan. Defect evolution of oxygen induced Vth-shift for ON-state biased AlGaN/GaN HEMTs. Appl. Phys. Lett. 2019,115:143504.

(11)Rong Wang, Wei Tan, Jian Zhang, Feng-Xiang Chen, Su-Huai Wei. First-principles study of alloying effects on fluorine incorporation in AlxGa1−xN alloys. J. Phys. D: Appl. Phys. 2018, 51(6): 065108

(12) Changkui, H. , Qiong, C. , Fengxiang, C. , Gfroerer, T. H. , Wanlass, M. W. , & Yong, Z. . Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode raman scattering. Light: Science & Applications, 2018,7(1):23.

(13) Wei-Kang Xu, Feng-Xiang Chen, Gong-Hui Cao, Jia-Qi Wang, Li-Sheng Wang，Factors influencing the performance of paintable carbon-based perovskite solar cells fabricated in ambient air，Chin. Phys. B, 2018, 27(3): 038402

(14)吕恒，胡昌奎，陈凤翔. 砷化镓广延缺陷的拉曼散射.物理学报，2018,67(5):056103.

六、主要科研项目:

1、国家自然科学基金(青年基金)，51702245，GaAs中广延缺陷与载流子输运关联研究，2018/01-2020/12，24万元，已结题，主持。

七、学术兼职:无