Chen Fengxiang

Basic Information

Condensed Matter Physics. Professor

phonixchen79@whut.edu.cn

Biography

2016/10 – now, Department of Physics Science and Technology, School of Physics and Mechanics, Wuhan University of Technology, Professor

2006/04 – 2016/09, Department of Physics Science and Technology, School of Science, Wuhan University of Technology, Associate Professor

2012/09 - 2013/09, University of North Carolina at Charlotte, Department of Electrical and Computer Engineering, Visiting Scholar, Advisor: Dr. Yong Zhang 

2005/04 - 2006/03, Department of Physics Science and Technology, School of Science, Wuhan University of Technology, Lecturer

1999/09 - 2005/04, Shanghai Jiaotong University, Optics, Ph. D, Advisor: Prof. Rongqiang Cui

1995/09 - 1999/07，China University of Geosciences (Wuhan)，Physics Teacher，Bachelor

Research Interests

Micro-nano optoelectronic devices，high-efficiency solar cells.

Publications

1. Xiaodong Wang, Fengxiang Chen, Xiaoli Li, Tao Xiang and Lisheng Wang. Emulation of Optoelectronic Synaptic Behavior in a MoS₂/WSe₂Based p−n van der Waals Heterostructure Memtransistor. ACS Appl. Electron. Mater. 2024, 6:4311−4320

2. Xiaoli Li, Fengxiang Chen, Xiaodong Wang and Lisheng Wang. Emulation of optical and electrical synaptic functions in MoS₂/SnSe₂ van der Waals heterojunction memtransistors. Japanese Journal of Applied Physics. 2024, 63: 056502. 

3. Tao Xiang, Fengxiang Chen, Xiaoli Li, Xiaodong Wang, Yuling Yan and Lisheng Wang. Simulation of optical and electrical synaptic functions in MoS₂ / α-In₂Se₃ heterojunction memtransistors. Chin. Phys. B, 2023, 32:117301.

4. Xue-ling Yu, Feng-Xiang Chen, Tao Xiang, Wen Deng, Jia-Ning Liu and Li-Sheng Wang. Photoelectric modulation and resistive switching characteristic of ReSe₂/WSe₂memtransistor. Acta Physica Sinica, 2022，71(21):217302.

5. Wen Deng, Li-Sheng Wang, Jia-Ning Liu, Tao Xiang and Feng-Xiang Chen. High-sensitive phototransistor based on vertical HfSe₂/MoS₂ heterostructure with broad-spectral response. Chin. Phys. B, 2022, 31:128502.

6. Jia-Ning Liu，Feng-xiang Chen，Wen Deng，Xue-ling Yu and Li-Sheng Wang, Optically-controlled resistive switching effects of CdS nanowire memtransistor. Chinese Physics B, 2021, 30(11): 116105

7. Wen Deng, Li-Sheng Wang, Jia-Ning Liu, Xue-ling Yu and Feng-Xiang Chen. Resistive switching behavior and mechanism of multilayer MoS₂ memtransistor under control of back gate bias and light illumination. Acta Physica Sinica, 2021, 70(21): 217302

8. Xu JX, Tong XD, Zhang SY, Cheng Z, Zhang L, Zheng PH, Chen FX, Wang R. Zhang Y and Tan W. Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures. AIP advances.2020,10:065122.

9. Jiyue Zou, Lisheng Wang, and Fengxiang Chen. Improved performance of top-gated multilayer MoS₂ transistors with channel fully encapsulated by Al₂O₃ dielectric, AIP Advances, 2019, 9: 095061.

10. Tong XD, Wang R. Zhang SY, Xu JX, Zheng PH, Chen FX. Degradation of Ka-Band GaN LNA under high-input power stress: experimental and theoretical insights. IEEE transactions on electron devices. 2019, 66(12):5091-5096.

11. Wang R, Tong XD, Xu JX, Zhang SY, Zheng PH, Chen FX, Tan W. Assessing the role of fluorine in the performance of Al_xGa_1-xN/GaN high-electron-mobility transistors from first-principles calculations. Physical Review Applied, 2019,11(5):054021.

12. Rong Wang, Jianxing Xu, Shiyong Zhang, Zhe Cheng, Lian Zhang, Penghui Zheng, Feng-Xiang Chen, Xiaodong Tong, Yun Zhang, and Wei Tan. Defect evolution of oxygen induced V_th-shift for ON-state biased AlGaN/GaN HEMTs. Appl. Phys. Lett. 2019,115:143504.